| PART |
Description |
Maker |
| SST37VF512 |
(SST37VFxxx) 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Many-Time Programmable Flash
|
Silicon Storage Technology
|
| M29W800DT70N6E M29W800DT70N6F M29W800DT70N6T M29W8 |
8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory
|
Numonyx B.V
|
| M36P0R9070E0 |
512 Mbit Flash memory 128 Mbit (Burst) PSRAM
|
Numonyx
|
| SST25WF512 SST25WF010 SST25WF020 |
512 Kbit / 1 Mbit / 2 Mbit 1.8V SPI Serial Flash
|
SST[Silicon Storage Technology, Inc]
|
| M29W800FB9D11 M29W800FB-KGD |
Known good die, 8-Mbit (1 Mbit x 8 or 512 Kbits x 16), boot block, 3 V supply Flash memory
|
Numonyx B.V
http://
|
| M36P0R9060N0ZANE M36P0R9060N0ZANF M36P0R9060N0 |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Mux I/O, Multi-Chip Package
|
Numonyx B.V
|
| AM41DL6408G |
64 Mbit (8 M x 8-Bit/4 M x 16-Bit) CMOS and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM (Prelimin
From old datasheet system
|
AMD Inc
|
| M36P0R9070E0ZACF M36P0R9070E0 M36P0R9070E0ZAC M36P |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package 512兆位（x16插槽，多银行，多层次，多突发28兆位闪存（突发）移动存储芯片.8V电源，多芯片封装
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| CY7C1387D-167AXCT |
18-Mbit (512 K 36/1 M 18) Flow-Through SRAM
|
Cypress
|
| CY7C1443AV33 CY7C1441AV33-133AXC CY7C1441AV33-133A |
36-Mbit (1 M x 36/2 M x 18/512 k x 72) Flow-Through SRAM
|
Cypress Semiconductor
|
